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| 2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4304 900 800 7 3(Pulse6) 1.5 35(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 2SC4304 Unit A V V V MHz pF 13.0min 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.1 IB2 (A) -0.35 ton (s) 0.7max tstg (s) 4.0max tf (s) 0.7max 2.54 3.9 BCE IC - VCE Characteristics (Typical) 3 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) (IC/IB=5) I C - VBE Temperature Characteristics (Typical) 3 (VCE=4V) 700mA 500 mA V C E( sat) 2 25C (Case Temp) 125C (Case Temp) Collector Current I C (A) 300m A 2 200m A Collector Current I C (A) -55C (Case Temp) 2 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. mp) mp) (Cas e Te 100mA 1 VBE(sat) p) -55C (Case Tem p) 25C (Case Tem Temp) 125C (Case Cas 25C 0 0 1 2 3 4 0 0.01 0.05 0.1 0.5 1 3 0 0 0.2 0.4 0.6 0.8 -55C IB=50m A 125 C ( 1 1 (Cas e Tem e Te p) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 DC C urrent G ain h FE j - a( C/W) hFE - IC Characteristics (Typical) ton*t s t g*t f ( s) 125C 25C -55C 10 7 5 t on* t stg * tf - I C Characteristics (Typical) j-a - t Characteristics 4 V C C 250V I C: IB1:-I B 2= 10:1.5:5 1 tf 0.5 ton 0.1 0.1 Transient Thermal Resistance tstg Sw it ching Time 1 5 0.5 0.3 2 0.01 0.05 0.1 0.5 1 3 0.5 Collector Current I C( A) 1 2 1 10 Time t(ms) 100 1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 10 5 50 s 10 0 Reverse Bias Safe Operating Area 10 5 Ma xim um Powe r Dissipat io n P C( W) 30 35 P c - T a Derating W ith Collector Curr ent I C (A) 1 0.5 Collecto r Cur rent I C( A) 1 0.5 s 1m DC ( Tc =2 5 C ) In s fin ite 10 ms 20 he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.01 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 10 0.01 5 10 50 100 500 1000 0.005 50 100 500 1000 2 0 Without Heatsink 0 25 50 75 100 125 150 0.005 2 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 100 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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